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| bat854w;bat854aw bat854cw;bat854sw features very low forward voltage very low reverse current guard ring protected very small smd package. absolute maximum ratings ta = 25 parameter symbol conditions min max unit continuous reverse voltage v r 40 v continuous forward current i f 200 ma repetitive peak forward current i frm tp 1s;d 0.5 300 ma non-repetitive peak forward current i fsm t = 8.3 ms half sinewave;jedec method 1 a storage temperature t stg -65 +150 junction temperature t j 150 operating ambient temperature t amb -65 +150 thermal resistance from junction to ambient r th j-a 625 k/w electrical characteristics ta = 25 parameter symbol conditions typ max unit i f = 0.1 ma 200 i f = 1 ma 260 i f = 10 ma 340 i f = 30 ma 420 i f = 100 ma 550 continuous reverse current i r v r = 25 v; note 1 0.5 a diode capacitance c d f=1mhz;v r =1v 20 pf note 1. pulse test: t p 300 s; ? 0.02. mv v f forward voltage marking type BTA854W bat854aw bat854cw bat854sw marking81828384 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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